IDD09SG60C 3 rd generation thinq! tm sic schottky diode features ? revolutionary semiconductor material - silicon carbide ? switching behavior benchmark ? no reverse recovery / no forward recovery ? temperature independent switching behavior ? high surge current capability ? pb-free lead plating; rohs compliant ? qualified according to jedec 1) for target applications ? halogen-free according to iec 61249-2-21 definition thinq! 3g diode designed for fast switching applications like: maximum ratings parameter symbol conditions unit continuous forward current i f t c <130 c 9a i f,sm t c =25 c, t p =10 ms 49 t c =150 c, t p =10 ms 42 non-repetitive peak forward current i f,max t c =25 c, t p =10 s 400 i 2 d t t c =25 c, t p =10 ms 12 a 2 s t c =150 c, t p =10 ms 9 repetitive peak reverse voltage v rrm t j =25 c 600 v diode dv/dt ruggedness d v/ d t v r = 0?.480 v 50 v/ns power dissipation p tot t c =25 c 115 w operating and storage temperature t j , t stg -55 ... 175 c soldering temperature, reflow soldering (max) t sold reflow msl1 260 ? breakdown voltage tested at 20ma 2) ? optimized for high temperature operation ? lowest figure of merit q c /i f i 2 t value value surge non-repetitive forward current, sine halfwave ? smps e.g.; ccm pfc ? motor drives; solar applications; ups v dc 600 v q c 15 nc i f ; t c < 130 c 9 a product summary type package marking pin 1 pin 2 pin 3 IDD09SG60C pg-to252-3 d09g60c n.c. a c rev. 2.0 page 1 2010-03-19
IDD09SG60C parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 1.3 k/w r thja smd version, device on pcb, minimal footprint --75 smd version, device on pcb, 6 cm 2 cooling area 5) -50- electrical characteristics, at t j =25 c, unless otherwise specified static characteristics dc blocking voltage v dc i r =0.05 ma, t j =25 c 600 - - v diode forward voltage v f i f =9 a, t j =25 c - 1.8 2.1 i f =9 a, t j =150 c - 2.2 - reverse current i r v r =600 v, t j =25 c - 0.7 80 a v r =600 v, t j =150 c - 3 800 ac characteristics total capacitive charge q c -15-nc switching time 3) t c - - <10 ns total capacitance c v r =1 v, f =1 mhz - 280 - pf v r =300 v, f =1 mhz -35- v r =600 v, f =1 mhz -35- 1) j-std20 and jesd22 6) only capacitive charge occuring, guaranteed by design. 4) under worst case z th conditions. 5) device on 40mm*40mm*1.5 epoxy pcb fr4 with 6cm2 (one layer, 70m thick) copper area for drain connection. pcb is vertical without blown air values v r =400 v, i f i f,max , d i f /d t =200 a/s, t j =150 c thermal resistance, junction - ambient 2) all devices tested under avalanche conditions, for a time periode of 10ms, at 20ma. 3) t c is the time constant for the capacitive displacement current waveform (independent from t j , i load and di/dt), different from t rr which is dependent on t j , i load and di/dt. no reverse recovery time constant t rr due to absence of minority carrier injection. rev. 2.0 page 2 2010-03-19
IDD09SG60C 1 power dissipation 2 diode forward current p tot =f( t c ); parameter: r thjc(max) i f =f( t c ) 4) ; t j 175 c; parameter: d = t p /t 3 typ. forward characteristic 4 typ. forward characteristic in surge current mode i f =f(v f ); t p =400 s; parameter: t j i f =f(v f ); t p =400 s; parameter: t j 0 20 40 60 80 100 120 25 50 75 100 125 150 175 t c [c] p tot [w] -55 c 25 c 100 c 150 c 175 c 0 10 20 30 40 50 60 70 02468 v f [v] i f [a] 1 0.7 0.5 0.3 0.1 0 10 20 30 40 50 60 70 25 50 75 100 125 150 175 t c [c] i f [a] -55 c 55 c 25 c 100 c 150 c 175 c 0 2 4 6 8 10 12 14 16 18 20 01234 v f [v] i f [a] rev. 2.0 page 3 2010-03-19
IDD09SG60C 5 typ. capacitance charge vs. current slope 6 typ. reverse current vs. reverse voltage q c =f(d i f /d t ) 6) ; i f i f,max i r =f(v r ); parameter: t j 7 typ. transient thermal impedance 8 typ. capacitance vs. reverse voltage z thjc =f( t p ); parameter: d = t p /t c =f( v r ); t c =25 c, f =1 mhz 0 2 4 6 8 10 12 14 16 100 400 700 1000 di f /d t [a/s] q c [nc] -55 c 25 c 100 c 150 c 175 c 10 1 10 0 10 -1 10 -2 10 -3 100 200 300 400 500 600 v r [v] i r [a] 10 3 10 2 10 1 10 0 10 -1 0 50 100 150 200 250 300 350 v r [v] c [pf] 0.02 0.05 0.1 0.2 0.5 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 1 10 0 10 -1 10 -2 t p [s] z thjc [k/w] 0 0.05 rev. 2.0 page 4 2010-03-19
IDD09SG60C 9 typ. c stored energy e c =f( v r ) 0 1 2 3 4 5 6 7 8 0 150 300 450 600 v r [v] e c [j] rev. 2.0 page 5 2010-03-19
IDD09SG60C pg-to252-3: outline dimensions in mm/inches rev. 2.0 page 6 2010-03-19
IDD09SG60C published by infineon technologies ag 81726 munich, germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 2.0 page 7 2010-03-19
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